When use 2N2907 as a amplifier, can be operated in the active region. You can replace the 2N2907 with the 2N2907A or NTE159M. The complementary NPN transistor to the 2N2907 is the 2N2222. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.ĢN2907 Environmental and Export Classifications RoHS Status The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. Voltage - Collector Emitter Breakdown (Max) In case of PNP transistor, current will flow from emitter to collector but majority charge carriers will be holes which are then collected by the collector.When we apply voltage at the base side it gets biased, and it allows the electrons to flow from emitter to collector.These transistors are termed as current controlled device because small current at the base side is used to control large current at the collector and emitter side.Base is negative is PNP transistor while it is positive in case of NPN transistors.voltage polarities and current directions will be reserved in case of PNP transistors as compared to NPN transistors. PNP and NPN transistors work in a similar fashion with some exceptions i.e.holes and electrons but majority charge carriers will be holes in this case. This transistor is a bipolar device, so conduction will be carried out by both charge carriers i.e.Collector is more negative with respect to base terminal. And collector-base junction will always be reverse biased so polarity must be reversed at the collector side.In order to conduct, base must be negative with respect to emitter.P side represents the emitter terminal and polarity at the emitter side will be positive.N side represent the base side and polarity will be negative at the base side.In 2N2907 transistors, N layers is composed of semiconductor material which exists between the two layers of P type material.Temperature of operation & storage is -65 to +150 ☌.Having DC current gain (hfe) of 100 – 300 (maximum).Power dissipation at ambient temperature is about 400mW.Max value of Collector current is 600mA.Emitter- to- Base voltage(VEBO) is 5volt (normally).Collector- to- Base voltage (VCBO) is 60volt.Maximum Collector to Emitter voltage (VCEO) is(40v maximum.).Having a high value of current (maximum.Making siren or dual Led or Lamp flasher.PNP Not Gate using 2N2907 Bipolar Junction Transistor BJT BJTS for BeginnerĢN2907 Environmental and Export Classifications

2907a transistor base collector emitter